SUSANTO, I.; TSAI, C.-Y.; NURZAL, N.; PURNOMO, M. Z.; ING-SONG YU. Study on the Structure of GaN films deposited on MoS2/Sapphire via Plasma-Assisted Molecular Beam Epitaxy. Recent in Engineering Science and Technology, [S. l.], v. 1, n. 02, p. 12–17, 2023. DOI: 10.59511/riestech.v1i02.14. Disponível em: https://www.mbi-journals.com/dev/index.php/riestech/article/view/14. Acesso em: 22 apr. 2026.